Toshiba MG200Q1US1 Power Transistor Module
$65.69
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Toshiba MG200Q1US1 Power Transistor Module
This high-performance module features:
600V voltage
200A current
120kW power
TO-247 package
-40°C to +150°C operating temperature
Its key features include:
High power density
Low on-resistance
Fast switching speed
Excellent thermal performance
RoHS compliance
Suitable for:
Industrial power supplies
Motor drives
Inverters
UPS systems
Toshiba MG200Q1US1 Power Transistor Module
Specifications:
Type: Power Transistor Module
Voltage: 600V
Current: 200A
Power: 120kW
Package: TO-247
Operating Temperature: -40°C to +150°C
Key Features:
High power density
Low on-resistance
Fast switching speed
Excellent thermal performance
RoHS compliant
Suitable Models:
Industrial power supplies
Motor drives
Inverters
* UPS systems
Full Description:
The Toshiba MG200Q1US1 Power Transistor Module is a high-performance, high-power device designed for demanding applications. Its low on-resistance and fast switching speed make it ideal for use in power supplies, motor drives, inverters, and UPS systems. The module’s robust construction and excellent thermal performance ensure reliable operation in harsh environments.
The MG200Q1US1 is RoHS compliant, meeting environmental regulations. Its compact TO-247 package allows for easy integration into various designs. With its exceptional performance and reliability, the Toshiba MG200Q1US1 Power Transistor Module is a trusted choice for engineers seeking high-quality power solutions.
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