Mitsubishi RA60H1317M1A RF Transistor Module
$62.70
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Mitsubishi RA60H1317M1A RF Transistor Module
This high-performance module offers:
Frequency Range: 100 MHz – 1 GHz
Power Output: 10 W
Gain: 10 dB
Noise Figure: 3 dB
Supply Voltage: 12 V
Current Consumption: 1 A
Package: TO-220
Key Features:
High power output
Low noise figure
Wide frequency range
Excellent linearity
RoHS compliant
Suitable for:
Power amplifiers
Transmitters
Receivers
Test equipment
Mitsubishi RA60H1317M1A RF Transistor Module
Specifications:
Frequency Range: 100 MHz – 1 GHz
Power Output: 10 W
Gain: 10 dB
Noise Figure: 3 dB
Supply Voltage: 12 V
Current Consumption: 1 A
Package: TO-220
Key Features:
High power output
Low noise figure
Wide frequency range
Excellent linearity
RoHS compliant
Model Suitability:
Suitable for use in a variety of RF applications, including:
Power amplifiers
Transmitters
Receivers
* Test equipment
Full Description:
The Mitsubishi RA60H1317M1A RF Transistor Module is a high-performance, wideband RF transistor module designed for use in a variety of RF applications. It features a high power output of 10 W, a low noise figure of 3 dB, and a wide frequency range of 100 MHz – 1 GHz. The module is also highly linear and RoHS compliant.
The RA60H1317M1A is an ideal choice for use in power amplifiers, transmitters, receivers, and test equipment. It is a reliable and efficient solution for a variety of RF applications.
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