Mitsubishi CM800HA-50H Power HVIGBT Bipolar Transistor Module
$913.49
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Mitsubishi CM800HA-50H Power HVIGBT Bipolar Transistor Module
This high-performance module offers:
High voltage (1200V) and current (800A) capability
Low gate drive requirements
Fast switching speed
Rugged construction
* RoHS compliance
Suitable for high-power inverters, converters, and motor drives.
Mitsubishi CM800HA-50H Power HVIGBT Bipolar Transistor Module
Specifications:
Collector-Emitter Voltage: 1200V
Collector Current: 800A
Gate-Emitter Voltage: ±20V
Gate Current: ±10A
Junction Temperature: -40°C to +150°C
Package: TO-247
Key Features:
High-voltage and high-current capability
Low gate drive requirements
Fast switching speed
Rugged construction
RoHS compliant
Model Suitability:
Suitable for use in high-power inverters, converters, and motor drives
Full Description:
The Mitsubishi CM800HA-50H Power HVIGBT Bipolar Transistor Module is a high-performance semiconductor device designed for use in high-power electronic applications. It features a high collector-emitter voltage rating of 1200V and a high collector current rating of 800A, making it suitable for use in demanding power conversion applications. The module also has low gate drive requirements, fast switching speed, and rugged construction, ensuring reliable operation in harsh environments. The CM800HA-50H is RoHS compliant, making it an environmentally friendly choice for power electronics applications.
