Mitsubishi QM600HA-2H Insulated Semiconductor Power Transistor Module
$143.99
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Mitsubishi QM600HA-2H Insulated Semiconductor Power Transistor Module
Specifications:
Collector-Emitter Voltage: 600V
Collector Current: 600A
Gate-Emitter Voltage: ±20V
Gate Current: ±10A
Power Dissipation: 1200W
Operating Temperature: -40°C to +125°C
Package: TO-247
Key Features:
High-power handling capability
Low on-resistance
Fast switching speed
Isolated substrate
RoHS compliant
Model Suitability:
Power converters
Inverters
Motor drives
Uninterruptible power supplies
Mitsubishi QM600HA-2H Insulated Semiconductor Power Transistor Module
Specifications:
Collector-Emitter Voltage: 600V
Collector Current: 600A
Gate-Emitter Voltage: ±20V
Gate Current: ±10A
Power Dissipation: 1200W
Operating Temperature: -40°C to +125°C
Package: TO-247
Key Features:
High-power handling capability
Low on-resistance
Fast switching speed
Isolated substrate
RoHS compliant
Model Suitability:
Power converters
Inverters
Motor drives
Uninterruptible power supplies
Full Description:
The Mitsubishi QM600HA-2H Insulated Semiconductor Power Transistor Module is a high-performance device designed for demanding power conversion applications. Its isolated substrate provides excellent electrical isolation, while its low on-resistance and fast switching speed enable efficient and reliable operation. The module is suitable for a wide range of applications, including power converters, inverters, motor drives, and uninterruptible power supplies.
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