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MACOM MRF151G RF MOSFET Power Amplifier Transistor NEW

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$98.26

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MACOM MRF151G RF MOSFET Power Amplifier Transistor NEW

Specifications:

Frequency Range: 1.8 – 2.2 GHz
Output Power: 150 W
Gain: 15 dB
Efficiency: 70%
VSWR: 2:1
Operating Temperature: -55°C to +150°C
Package: TO-220

Key Features:

High power output
High efficiency
Low distortion
Wide bandwidth
Rugged construction

Model Suitability:

Cellular base stations
Microwave ovens
Radar systems
Satellite communications

Description

MACOM MRF151G RF MOSFET Power Amplifier Transistor NEW

Specifications:

Frequency Range: 1.8 – 2.2 GHz
Output Power: 150 W
Gain: 15 dB
Efficiency: 70%
VSWR: 2:1
Operating Temperature: -55°C to +150°C
Package: TO-220

Key Features:

High power output
High efficiency
Low distortion
Wide bandwidth
Rugged construction

Model Suitability:

Cellular base stations
Microwave ovens
Radar systems
Satellite communications

Full Description:

The MACOM MRF151G RF MOSFET Power Amplifier Transistor is a high-performance device designed for use in a wide range of RF applications. It features a rugged construction and is capable of delivering high power output with high efficiency and low distortion. The MRF151G is also suitable for use in harsh environments, making it an ideal choice for applications such as cellular base stations, microwave ovens, radar systems, and satellite communications.

$98.26

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